2N3720 Overview
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in mercial, Industrial, and Military power switching, amplifier, and regulator applications.
2N3720 Key Features
- Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min)
- 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC =
- Bandwidth Product: fT = 90 MHz (Typ)
- Silicon PNP Power Transistors
